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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Simulation of the electronic properties of InxGa1-xAs quantum dots and their wetting layer under the influence of indium segregation

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Author(s):
Maia, A. D. B. [1] ; da Silva, E. C. F. [1] ; Quivy, A. A. [1] ; Bindilatti, V. [1] ; de Aquino, V. M. [2] ; Dias, I. F. L. [2]
Total Authors: 6
Affiliation:
[1] Univ Sao Paulo, Inst Fis, BR-05314970 Sao Paulo - Brazil
[2] Univ Estadual Londrina, Dept Fis, BR-86051970 Londrina, PR - Brazil
Total Affiliations: 2
Document type: Journal article
Source: Journal of Applied Physics; v. 114, n. 8 AUG 28 2013.
Web of Science Citations: 8
Abstract

We present anisotropic nonparabolic position-dependent effective-mass calculations of the bound energy levels of electrons confined in lens-shaped InxGa1-xAs quantum dots embedded in a GaAs matrix. The strain and In gradient inside the quantum dots and their wetting layer (due to the strong In segregation effect present in the InxGa1-xAs/GaAs system) were taken into account. The bound eigenstates and eigenenergies of electrons in a finite 3D confinement potential were determined by the full numerical diagonalization of the Hamiltonian. The quantum dots and their wetting layer were sliced into a finite number of monolayers parallel to the substrate surface, each one with a specific In concentration, in order to be able to reproduce any composition profile along the growth direction. A comparison between the eigenenergies of the ``pure{''} InAs quantum dots and the quantum dots with an inhomogeneous In content indicates that In segregation dramatically affects their electronic structure and must be taken into account if one wishes to accurately simulate the real optoelectronic properties of such nanostructures. (C) 2013 AIP Publishing LLC. (AU)

FAPESP's process: 08/00841-7 - Responsivity and noise of infrared photodetectors based on quantum wells and dots grown by molecular-beam epitaxy
Grantee:Alain André Quivy
Support type: Regular Research Grants