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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Interaction between lamellar twinning and catalyst dynamics in spontaneous core-shell InGaP nanowires

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Autor(es):
Oliveira, D. S. [1] ; Tizei, L. H. G. [2] ; Li, A. [3] ; Vasconcelos, T. L. [4] ; Senna, C. A. [4] ; Archanjo, B. S. [4] ; Ugarte, D. [1] ; Cotta, M. A. [1]
Número total de Autores: 8
Afiliação do(s) autor(es):
[1] Univ Estadual Campinas, UNICAMP, Inst Fis GlebWataghin, BR-13083859 Campinas, SP - Brazil
[2] Univ Paris 11, CNRS UMR 8502, Lab Phys Solides, F-91405 Orsay - France
[3] TU Eindhoven, Dept Appl Phys, NL-5612 AZ Eindhoven - Netherlands
[4] Inst Nacl Metrol Qualidade & Tecnol INMETRO, Div Met Mat, BR-25250020 Duque De Caxias, RJ - Brazil
Número total de Afiliações: 4
Tipo de documento: Artigo Científico
Fonte: NANOSCALE; v. 7, n. 29, p. 12722-12727, 2015.
Citações Web of Science: 9
Resumo

Semiconductor nanowires oriented along the {[}211] direction usually present twins parallel to their axis. For group IV nanowires this kind of twin allows the formation of a catalyst-nanowire interface composed of two equivalent [111] facets. For III-V nanowires, however, the twin will generate two facets with different polarities. In order to keep the < 211 > orientation stable, a balance in growth rates for these different facets must be reached. We report here the observation of stable, micron-long < 211 >-oriented InGaP nanowires with a spontaneous core-shell structure. We show that stacking fault formation in the crystal region corresponding to the [111] A facet termination provides a stable NW/NP interface for growth along the < 211 > direction. During sample cool down, however, the catalyst migrates to a lateral [111] B facet, allowing the growth of branches perpendicular to the initial orientation. In addition to that, we show that the core-shell structure is non-concentric, most likely due to the asymmetry between the facets formed in the NW sidewall; this effect generates stress along the nanowire, which can be relieved through bending. (AU)

Processo FAPESP: 13/02300-1 - Nanofios semicondutores: mecanismos de formação e aplicação em biossensores
Beneficiário:Mônica Alonso Cotta
Modalidade de apoio: Auxílio à Pesquisa - Regular