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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Interaction between lamellar twinning and catalyst dynamics in spontaneous core-shell InGaP nanowires

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Author(s):
Oliveira, D. S. [1] ; Tizei, L. H. G. [2] ; Li, A. [3] ; Vasconcelos, T. L. [4] ; Senna, C. A. [4] ; Archanjo, B. S. [4] ; Ugarte, D. [1] ; Cotta, M. A. [1]
Total Authors: 8
Affiliation:
[1] Univ Estadual Campinas, UNICAMP, Inst Fis GlebWataghin, BR-13083859 Campinas, SP - Brazil
[2] Univ Paris 11, CNRS UMR 8502, Lab Phys Solides, F-91405 Orsay - France
[3] TU Eindhoven, Dept Appl Phys, NL-5612 AZ Eindhoven - Netherlands
[4] Inst Nacl Metrol Qualidade & Tecnol INMETRO, Div Met Mat, BR-25250020 Duque De Caxias, RJ - Brazil
Total Affiliations: 4
Document type: Journal article
Source: NANOSCALE; v. 7, n. 29, p. 12722-12727, 2015.
Web of Science Citations: 9
Abstract

Semiconductor nanowires oriented along the {[}211] direction usually present twins parallel to their axis. For group IV nanowires this kind of twin allows the formation of a catalyst-nanowire interface composed of two equivalent [111] facets. For III-V nanowires, however, the twin will generate two facets with different polarities. In order to keep the < 211 > orientation stable, a balance in growth rates for these different facets must be reached. We report here the observation of stable, micron-long < 211 >-oriented InGaP nanowires with a spontaneous core-shell structure. We show that stacking fault formation in the crystal region corresponding to the [111] A facet termination provides a stable NW/NP interface for growth along the < 211 > direction. During sample cool down, however, the catalyst migrates to a lateral [111] B facet, allowing the growth of branches perpendicular to the initial orientation. In addition to that, we show that the core-shell structure is non-concentric, most likely due to the asymmetry between the facets formed in the NW sidewall; this effect generates stress along the nanowire, which can be relieved through bending. (AU)

FAPESP's process: 13/02300-1 - Semiconductor nanowires: formation mechanisms and biosensing applications
Grantee:Mônica Alonso Cotta
Support Opportunities: Regular Research Grants