GaN nanowires have attracted the attention of several research groups due to their scientific and technological aspects. In particular, the growth process of the nanowires and their applications in optoelectronic devices have at present bold interest. The GaN nanowires stand out for their spontaneous growth, without any external catalysts or pre-patterning. Despite the existing reports, there are still important open questions about fundamental aspects of the GaN nanowire growth, such as the roles of the strain and substrate nucleus interface characteristics to nanowire formation. The basic aspects of the nanowire growth and related questions will be the focus of this research. The molecular beam epitaxy (MBE) is an important technique for growing GaN nanowires and will be employed in this investigation. The growth of GaN nanowires using MBE generally require nitrogen rich atmosphere and low gallium pressure associated with high substrate temperature. The knowledge and results derived from this investigation will be used, in a subsequent step, to the growth of GaN nanowires using reactive sputtering, and to compare the conditions of nanowire growth using both processes. The idea is to grow high quality nanowire arrangements over large areas using low cost processing techniques. (AU)
News published in Agência FAPESP Newsletter about the scholarship:
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
LAVARDA, FRANCISCO CARLOS;
SCHIABER, ZIANI DE SOUZA;
DIAS AGUIAR, LEONARDO DE CONTI;
OLIVEIRA, ELIEZER FERNANDO;
GONCALVES LEITE, DOUGLAS MARCEL;
CAMILO, JR., ALEXANDRE;
DIAS DA SILVA, JOSE HUMBERTO.
Electronic structure of a hydrogenated gallium nitride nanoparticle.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS,
Web of Science Citations: 1.
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