Growth of GaN films and nanowires using Magnetron Sputter Epitaxy (MSE)

• Grant number: 12/21147-7
• Support Opportunities: Regular Research Grants
• Start date: April 01, 2013
• End date: June 30, 2015
• Field of knowledge: Engineering - Materials and Metallurgical Engineering - Nonmetallic Materials
• Principal Investigator: Jose Humberto Dias da Silva
• Grantee: Jose Humberto Dias da Silva
• Host Institution: Faculdade de Ciências (FC). Universidade Estadual Paulista (UNESP). Campus de Bauru. Bauru , SP, Brazil
• Associated researchers: Paulo Noronha Lisboa Filho

Abstract

The growth and physical properties related to low dimensionality of semiconductor nanostructures display bold interest to the development of fundamental science and new technologies. In this context, the growth of GaN films and nanowires using magnetron sputter epitaxy (MSE) will be investigated. In the proposed MSE configuration the argon plasma will be limited to the target nearby regions while the nitrogen plasma will be confined to the vicinity of the substrate holder, without direct contact with the growing surface. This new MSE configuration is expected to minimize the target poisoning and the collision damages produced by energetic particles on the growing surfaces. The wide range of controllable deposition parameters will allow the deposition of films and nanowires in the same equipment. During nanowire growth, high flow rates of plasma activated nitrogen, high substrate temperatures, low pressures and directional incidence of Ga will be used as compared to the conditions employed in the depositions of bidimensional layers. The spontaneous growth of nanowires due to the preferencial sticking of the Ga atoms to the (0001) planes will receive prioritary attention. The surface morphology, structure, electronic and optical properties will be characterized with focus in the optimization of growth, nucleation layers, and desired physical characteristics of the produced nanomaterials. Doping of the materials will be investigated with regards to the LEDs, ultra-high-power electronics, nanophotonics, and spintronics applications. (AU)

Scientific publications

(6)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

DEVILLERS, T.; LEITE, D. M. G.; DIAS DA SILVA, J. H.; BONANNI, A.. Functional Mn-Mg-k cation complexes in GaN featured by Raman spectroscopy. Applied Physics Letters, v. 103, n. 21, NOV 18 2013. (12/21147-7)

SCHIABER, ZIANI S.; LEITE, DOUGLAS M. G.; BORTOLETO, JOSE R. R.; LISBOA-FILHO, PAULO N.; DA SILVA, JOSE H. D.. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering. Journal of Applied Physics, v. 114, n. 18, NOV 14 2013. (05/02249-0, 12/21147-7, 11/22664-2)

BRANDT, IURI S.; MARTINS, CESAR A.; ZOLDAN, VINICIUS C.; VIEGAS, ALEXANDRE D. C.; DIAS DA SILVA, JOSE H.; PASA, ANDRE A.. Structural and optical properties of Cu2O crystalline electrodeposited films. Thin Solid Films, v. 562, p. 144-151, JUL 1 2014. (12/21147-7)

LAVARDA, FRANCISCO CARLOS; SCHIABER, ZIANI DE SOUZA; DIAS AGUIAR, LEONARDO DE CONTI; OLIVEIRA, ELIEZER FERNANDO; GONCALVES LEITE, DOUGLAS MARCEL; CAMILO, JR., ALEXANDRE; DIAS DA SILVA, JOSE HUMBERTO. Electronic structure of a hydrogenated gallium nitride nanoparticle. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, v. 252, n. 10, p. 2317-2322, OCT 2015. (12/21147-7, 14/20410-1, 11/22664-2, 12/21983-0, 13/25625-3)

ANGELICO, JOAO C.; PEREIRA, ANDRE L. J.; DE ARRUDA, LARISA B.; DIAS DA SILVA, JOSE H.. Electrical transport mechanisms and structure of hydrogenated and non-hydrogenated nanocrystalline Ga1-xMnxAs films. Journal of Alloys and Compounds, v. 630, p. 78-83, MAY 5 2015. (05/02249-0, 12/21147-7)

SCHIABER, ZIANI DE SOUZA; CALABRESE, GABRIELE; KONG, XIANG; TRAMPERT, ACHIM; JENICHEN, BERND; DIAS DA SILVA, JOSE HUMBERTO; GEELHAAR, LUTZ; BRANDT, OLIVER; FERNANDEZ-GARRIDO, SERGIO. Polarity-Induced Selective Area Epitaxy of GaN Nanowires. Nano Letters, v. 17, n. 1, p. 63-70, JAN 2017. (12/21147-7)