| Grant number: | 97/12069-0 |
| Support Opportunities: | Research Projects - Thematic Grants |
| Duration: | May 01, 1998 - July 31, 2004 |
| Field of knowledge: | Physical Sciences and Mathematics - Physics - Condensed Matter Physics |
| Principal Investigator: | Fernando Alvarez |
| Grantee: | Fernando Alvarez |
| Host Institution: | Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil |
| Pesquisadores principais: | Ivan Emilio Chambouleyron |
| Associated scholarship(s): | 04/01977-9 - Nano and microstructure of nitrogen-containing metal alloys implanted by pulsed plasma and ion beam,
BP.PD 00/09334-9 - Structural and physical properties of nitrogen-containing materials obtained by ion beam assisted deposition, BP.DR |
Abstract
The aim of this proposai is to study the physical properties of amorphous semiconductors belonging to Column IV of the Periodic Table (Si, Ge, C), some of their alioys (SiC., SiGe, CN., GeC,), and the effects of controlled contamination ("doping") with elements of column V and III. The main purpose of the project is to improve the understanding of the electronic, optical, structural and mechanical properties of the materiais, as well as potentiate their use in technological applications. These goals are intimately linked to the scientific tradition of our research group and with the current graduate student programs at the Instituto de Física "Gleb Wataghin". Therefore, the training of student at the three levels, i.e., scientific training for under-graduate students, Master and Ph.D. students, is of fundamental importance to the proposal. To reach these goals, we shall take advantage of our past experience and the existence of modern experimental facilities. The project also considers the upgrading and renewing some experimental facilities. The materiais to be studied will be depositei by the standards techniques currently used in our laboratories, such as thermal evaporation, e-beam, sputtering and plasma assisted chemical vapor deposition. Besides, we shall use a deposition facility recently implemented in our laboratories, that is, the "Dual lon Beam Assisted Deposition" (DIBAD) machine. This facility allows the deposition by DIBAD, and analysis in situ by photoelectron spectroscopy, of bulk semiconductors and interfaces. We shail continue the studies of controlled contamination of Group IV amorphous semiconductors from solid sources and its relationship with the electronic transporta an effort to understand the structural properties will be done using photoelectron spectroscopy. The studies of the eiectron core levels and the valence band will allow us to gain a ciearer physical insight of the local atoms' environments, either in bulk or at the interfaces. Experimental conditions leading to improve the properties of the materiais will be pursued. The influence of hydrogen on the growth mechanisms will be systematically studied in situ on materials depositel by DIBD. In particular, the induced stress, commonly found in amorphous thin films, will be studied together with the elastic properties of the materials. (AU)
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