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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Electrical characterization of vertically stacked p-FET SOI nanowires

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Autor(es):
Paz, Bruna Cardoso [1] ; Casse, Mikael [2] ; Barraud, Sylvain [2] ; Reimbold, Gilles [2] ; Vinet, Maud [2] ; Faynot, Olivier [2] ; Pavanello, Marcelo Antonio [1]
Número total de Autores: 7
Afiliação do(s) autor(es):
[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo - Brazil
[2] CEA, LETI Minatec, LCTE, Dept Composants Silicium, SCME, Grenoble - France
Número total de Afiliações: 2
Tipo de documento: Artigo Científico
Fonte: Solid-State Electronics; v. 141, p. 84-91, MAR 2018.
Citações Web of Science: 3
Resumo

This work presents the performance and transport characteristics of vertically stacked p-type MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. The conventional procedure to extract the effective oxide thickness (EOT) and Shift and Ratio Method (S\&R) have been adapted and validated through tridimensional numerical simulations. Electrical characterization is performed for NWs with {[}1 1 0]- and {[}1 0 0]-oriented channels, as a function of both fin width (W-FIN) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15 nm gate length, for both orientations. Effective mobility is found around two times higher for {[}1 1 0]-in comparison to {[}1 00]-oriented NWs due to higher holes mobility contribution in (1 1 0) plan. Improvements obtained on I-ON/I-O(FF) by reducing W-FIN are mainly due to subthreshold slope decrease, once small and none mobility increase is obtained for {[}1 1 0]- and {[}1 0 0]-oriented NWs, respectively. (AU)

Processo FAPESP: 16/06301-0 - Caracterização elétrica e simulação tridimensional de nanofios transistores MOS
Beneficiário:Bruna Cardoso Paz
Linha de fomento: Bolsas no Exterior - Estágio de Pesquisa - Doutorado
Processo FAPESP: 15/10491-7 - Caracterização elétrica e simulação tridimensional de nanofios transistores MOS
Beneficiário:Bruna Cardoso Paz
Linha de fomento: Bolsas no Brasil - Doutorado