Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

Autor(es)

Barbosa, M. S. ^{[1, 2]} ; Oliveira, F. M. B. ^{[3, 2]} ; Meng, X. ^[1] ; Soavi, F. ^[4] ; Santato, C. ^[1] ; Orlandi, M. O. ^[2]

Afiliação do(s) autor(es)

^[1] Polytech Montreal, Dept Genie Phys, CP 6079, Succ Ctr Ville, Montreal, PQ H3C 3A7 - Canada

^[2] Sao Paulo State Univ UNESP, Dept Fis Quim, Rua Prof Degni 55, BR-14800060 Araraquara - Brazil

^[3] Univ Fed Sao Carlos, Dept Chem, POB 676, BR-13565905 Sao Carlos, SP - Brazil

^[4] Univ Bologna, Dipartimento Chim Giacomo Ciamician, Via Selmi 2, I-40126 Bologna - Italy

• Tipo de documento: Artigo Científico
• Fonte: JOURNAL OF MATERIALS CHEMISTRY C; v. 6, n. 8, p. 1980-1987, FEB 28 2018.
• Citações Web of Science: 6

Resumo

Electrolyte-gated transistors hold promise for applications in printable and flexible electronics. Metal oxide semiconductors are particularly interesting as electrolyte-gated channel materials for their abundance, thermodynamic stability and ease of processing under ambient conditions. In this work, we synthesized by sol-gel and hydrothermal methods different types of tungsten oxide to be used as channel materials in ion gel-gated transistors. X-ray diffraction and scanning and transmission electron microscopy revealed that the differently processed oxides show a different structure (hexagonal and monoclinic) and morphology (granular, nanofiber and nanoplate). We studied the electrochemical and transistor properties of the oxides using, as the gating media, two different ion gels prepared from the same ionic liquid, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ({[}EMIM]TFSI), and two different block copolymers. We tentatively propose that for sufficiently high values of the gate-source bias, the doping results from chemical and electrochemical contributions. (AU)

• Processo FAPESP: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
• Beneficiário: Marcelo Ornaghi Orlandi
• Linha de fomento: Auxílio à Pesquisa - Regular
• Processo FAPESP: 16/09033-7 - Transistores de contato de eletrólito baseado em filmes de WO3
• Beneficiário: Martin Schwellberger Barbosa
• Linha de fomento: Bolsas no Exterior - Estágio de Pesquisa - Doutorado
• Processo FAPESP: 13/07296-2 - CDMF - Centro de Desenvolvimento de Materiais Funcionais
• Beneficiário: Elson Longo da Silva
• Linha de fomento: Auxílio à Pesquisa - Centros de Pesquisa, Inovação e Difusão - CEPIDs
• Processo FAPESP: 14/27079-9 - Transistores de contato por eletrólito baseado em filmes finos de WO3: influência da morfologia e estrutura dos filmes na performance dos dispositivos
• Beneficiário: Martin Schwellberger Barbosa
• Linha de fomento: Bolsas no Brasil - Doutorado