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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

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Barbosa, M. S. [1, 2] ; Oliveira, F. M. B. [3, 2] ; Meng, X. [1] ; Soavi, F. [4] ; Santato, C. [1] ; Orlandi, M. O. [2]
Total Authors: 6
[1] Polytech Montreal, Dept Genie Phys, CP 6079, Succ Ctr Ville, Montreal, PQ H3C 3A7 - Canada
[2] Sao Paulo State Univ UNESP, Dept Fis Quim, Rua Prof Degni 55, BR-14800060 Araraquara - Brazil
[3] Univ Fed Sao Carlos, Dept Chem, POB 676, BR-13565905 Sao Carlos, SP - Brazil
[4] Univ Bologna, Dipartimento Chim Giacomo Ciamician, Via Selmi 2, I-40126 Bologna - Italy
Total Affiliations: 4
Document type: Journal article
Source: JOURNAL OF MATERIALS CHEMISTRY C; v. 6, n. 8, p. 1980-1987, FEB 28 2018.
Web of Science Citations: 2

Electrolyte-gated transistors hold promise for applications in printable and flexible electronics. Metal oxide semiconductors are particularly interesting as electrolyte-gated channel materials for their abundance, thermodynamic stability and ease of processing under ambient conditions. In this work, we synthesized by sol-gel and hydrothermal methods different types of tungsten oxide to be used as channel materials in ion gel-gated transistors. X-ray diffraction and scanning and transmission electron microscopy revealed that the differently processed oxides show a different structure (hexagonal and monoclinic) and morphology (granular, nanofiber and nanoplate). We studied the electrochemical and transistor properties of the oxides using, as the gating media, two different ion gels prepared from the same ionic liquid, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ({[}EMIM]TFSI), and two different block copolymers. We tentatively propose that for sufficiently high values of the gate-source bias, the doping results from chemical and electrochemical contributions. (AU)

FAPESP's process: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
Grantee:Marcelo Ornaghi Orlandi
Support type: Regular Research Grants
FAPESP's process: 16/09033-7 - Electrolyte-gated transistors based on WO3 films
Grantee:Martin Schwellberger Barbosa
Support type: Scholarships abroad - Research Internship - Doctorate
FAPESP's process: 13/07296-2 - CDMF - Center for the Development of Functional Materials
Grantee:Elson Longo da Silva
Support type: Research Grants - Research, Innovation and Dissemination Centers - RIDC
FAPESP's process: 14/27079-9 - Electrolyte-Gated transistors based on WO3 thin films: influence of the morphology and structure of the films on the device performance
Grantee:Martin Schwellberger Barbosa
Support type: Scholarships in Brazil - Doctorate