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(Referência obtida automaticamente do Web of Science, por meio da informação sobre o financiamento pela FAPESP e o número do processo correspondente, incluída na publicação pelos autores.)

Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires

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Autor(es):
Koivusalo, Eero S. [1] ; Hakkarainen, Teemu V. [1] ; Galeti, Helder V. A. [2] ; Gobato, Yara G. [3] ; Dubrovskii, Vladimir G. [4] ; Guina, Mircea D. [1]
Número total de Autores: 6
Afiliação do(s) autor(es):
[1] Tampere Univ Technol, Optoelect Res Ctr, POB 692, FIN-33101 Tampere - Finland
[2] Univ Fed Sao Carlos, Elect Engn Dept, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Fed Sao Carlos, Phys Dept, BR-13565905 Sao Carlos, SP - Brazil
[4] ITMO Univ, Kronverkskiy Prospekt 49, St Petersburg 197101 - Russia
Número total de Afiliações: 4
Tipo de documento: Artigo Científico
Fonte: Nano Letters; v. 19, n. 1, p. 82-89, JAN 2019.
Citações Web of Science: 4
Resumo

The typical vapor liquid solid growth of nanowires is restricted to a vertical one-dimensional geometry, while there is a broad interest for more complex structures in the context of electronics and photonics applications. Controllable switching of the nanowire growth direction opens up new horizons in the bottom-up engineering of self assembled nanostructures, for example, to fabricate interconnected nanowires used for quantum transport measurements. In this work, we demonstrate a robust and highly controllable method for deterministic switching of the growth direction of self-catalyzed GaAs nanowires. The method is based on the modification of the droplet nanowire interface in the annealing stage without any fluxes and subsequent growth in the horizontal direction by a twin-mediated mechanism with indications of a novel type of interface oscillations. A 100% yield of switching the nanowire growth direction from vertical to horizontal is achieved by systematically optimizing the growth parameters. A kinetic model describing the competition of different interface structures is introduced to explain the switching mechanism and the related nanowire geometries. The model also predicts that the growth of similar structures is possible for all vapor liquid solid nanowires with commonly observed truncated facets at the growth interface. (AU)

Processo FAPESP: 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados
Beneficiário:Helder Vinícius Avanço Galeti
Linha de fomento: Auxílio à Pesquisa - Regular
Processo FAPESP: 16/10668-7 - Propriedades óticas, magneto-óticas, de transporte e magneto-transporte de materiais semicondutores bidimensionais baseados em materiais de transição dicalcogenados
Beneficiário:Yara Galvão Gobato
Linha de fomento: Auxílio à Pesquisa - Regular