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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Deterministic Switching of the Growth Direction of Self-Catalyzed GaAs Nanowires

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Author(s):
Koivusalo, Eero S. [1] ; Hakkarainen, Teemu V. [1] ; Galeti, Helder V. A. [2] ; Gobato, Yara G. [3] ; Dubrovskii, Vladimir G. [4] ; Guina, Mircea D. [1]
Total Authors: 6
Affiliation:
[1] Tampere Univ Technol, Optoelect Res Ctr, POB 692, FIN-33101 Tampere - Finland
[2] Univ Fed Sao Carlos, Elect Engn Dept, BR-13565905 Sao Carlos, SP - Brazil
[3] Univ Fed Sao Carlos, Phys Dept, BR-13565905 Sao Carlos, SP - Brazil
[4] ITMO Univ, Kronverkskiy Prospekt 49, St Petersburg 197101 - Russia
Total Affiliations: 4
Document type: Journal article
Source: Nano Letters; v. 19, n. 1, p. 82-89, JAN 2019.
Web of Science Citations: 4
Abstract

The typical vapor liquid solid growth of nanowires is restricted to a vertical one-dimensional geometry, while there is a broad interest for more complex structures in the context of electronics and photonics applications. Controllable switching of the nanowire growth direction opens up new horizons in the bottom-up engineering of self assembled nanostructures, for example, to fabricate interconnected nanowires used for quantum transport measurements. In this work, we demonstrate a robust and highly controllable method for deterministic switching of the growth direction of self-catalyzed GaAs nanowires. The method is based on the modification of the droplet nanowire interface in the annealing stage without any fluxes and subsequent growth in the horizontal direction by a twin-mediated mechanism with indications of a novel type of interface oscillations. A 100% yield of switching the nanowire growth direction from vertical to horizontal is achieved by systematically optimizing the growth parameters. A kinetic model describing the competition of different interface structures is introduced to explain the switching mechanism and the related nanowire geometries. The model also predicts that the growth of similar structures is possible for all vapor liquid solid nanowires with commonly observed truncated facets at the growth interface. (AU)

FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support Opportunities: Regular Research Grants
FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
Grantee:Helder Vinícius Avanço Galeti
Support Opportunities: Regular Research Grants