Incorporation of Cd-Doping in SnO2

Autor(es)

Schell, J. ^{[1, 2, 3]} ; Dang, T. T. ^[4] ; Carbonari, A. W. ^[5]

Afiliação do(s) autor(es)

^[1] European Org Nucl Res CERN, CH-1211 Geneva - Switzerland

^[2] Univ Duisburg Essen, Inst Mat Sci, D-45141 Essen - Germany

^[3] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, D-45141 Essen - Germany

^[4] Univ Bonn, Helmholtz Inst Strahlen & Kernphys, D-53115 Bonn - Germany

^[5] IPEN, BR-05508000 Sao Paulo, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: CRYSTALS; v. 10, n. 1 JAN 2020.
• Citações Web of Science: 0

Resumo

Tuning the electrical properties of materials by controlling their doping content has been utilized for decades in semiconducting oxides. Here, an atomistic view is successfully employed to obtain local information on the charge distribution and point defects in Cd-doped SnO2. We present a study that uses the time-differential perturbed gamma-gamma angular correlations (TDPAC) method in samples prepared by using a sol-gel approach. The hyperfine field parameters are presented as functions of the annealing temperature in pellet samples to show the evolution of incorporating Cd dopants into the crystal lattice. Additionally, the system was characterized with X-ray fluorescence, electron dispersive spectroscopy, and scanning electron microscopy after the probe nuclei In-111(Cd-111) decayed. The TDPAC results reveal that the probe ions were incorporated into two different local environments of the SnO2 lattice at temperatures up to 973 K for cation substitutional sites. (AU)

• Processo FAPESP: 18/18657-0 - Influencia da Valência do elemento dopante sobre a estrutura local e eletrônica em óxidos de Vanádio: espectroscopia de correlação angular perturbada diferencial em tempo no ISOLDE
• Beneficiário: Artur Wilson Carbonari
• Linha de fomento: Bolsas no Exterior - Pesquisa