Incorporation of Cd-Doping in SnO2

Author(s)

Schell, J. ^{[1, 2, 3]} ; Dang, T. T. ^[4] ; Carbonari, A. W. ^[5]

Affiliation

^[1] European Org Nucl Res CERN, CH-1211 Geneva - Switzerland

^[2] Univ Duisburg Essen, Inst Mat Sci, D-45141 Essen - Germany

^[3] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, D-45141 Essen - Germany

^[4] Univ Bonn, Helmholtz Inst Strahlen & Kernphys, D-53115 Bonn - Germany

^[5] IPEN, BR-05508000 Sao Paulo, SP - Brazil

• Document type: Journal article
• Source: CRYSTALS; v. 10, n. 1 JAN 2020.
• Web of Science Citations: 1

Abstract

Tuning the electrical properties of materials by controlling their doping content has been utilized for decades in semiconducting oxides. Here, an atomistic view is successfully employed to obtain local information on the charge distribution and point defects in Cd-doped SnO2. We present a study that uses the time-differential perturbed gamma-gamma angular correlations (TDPAC) method in samples prepared by using a sol-gel approach. The hyperfine field parameters are presented as functions of the annealing temperature in pellet samples to show the evolution of incorporating Cd dopants into the crystal lattice. Additionally, the system was characterized with X-ray fluorescence, electron dispersive spectroscopy, and scanning electron microscopy after the probe nuclei In-111(Cd-111) decayed. The TDPAC results reveal that the probe ions were incorporated into two different local environments of the SnO2 lattice at temperatures up to 973 K for cation substitutional sites. (AU)

• FAPESP's process: 18/18657-0 - Influence of valence of doping element on local electronic and crystal structure in vanadium oxides: Time-Differential Perturbed Angular Correlations spectroscopy at ISOLDE
• Grantee: Artur Wilson Carbonari
• Support Opportunities: Scholarships abroad - Research