Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

Autor(es)

Barbosa, Martin S. ^{[1, 2]} ; Balke, Nina ^[3] ; Tsai, Wan-Yu ^[3] ; Santato, Clara ^[2] ; Orlandi, Marcelo O. ^[1]

Afiliação do(s) autor(es)

^[1] Univ Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP - Brazil

^[2] Polytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7 - Canada

^[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 - USA

• Tipo de documento: Artigo Científico
• Fonte: Journal of Physical Chemistry Letters; v. 11, n. 9, p. 3257-3262, MAY 7 2020.
• Citações Web of Science: 0

Resumo

The structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force-distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol-gel films of mesoporous tungsten oxide. We successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance. (AU)

• Processo FAPESP: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
• Beneficiário: Marcelo Ornaghi Orlandi
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 16/09033-7 - Transistores de contato de eletrólito baseado em filmes de WO3
• Beneficiário: Martin Schwellberger Barbosa
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Doutorado
• Processo FAPESP: 14/27079-9 - Transistores de contato por eletrólito baseado em filmes finos de WO3: influência da morfologia e estrutura dos filmes na performance dos dispositivos
• Beneficiário: Martin Schwellberger Barbosa
• Modalidade de apoio: Bolsas no Brasil - Doutorado