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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Structure of the Electrical Double Layer at the Interface between an Ionic Liquid and Tungsten Oxide in Ion-Gated Transistors

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Author(s):
Barbosa, Martin S. [1, 2] ; Balke, Nina [3] ; Tsai, Wan-Yu [3] ; Santato, Clara [2] ; Orlandi, Marcelo O. [1]
Total Authors: 5
Affiliation:
[1] Univ Estadual Paulista, Dept Fis Quim, BR-14800060 Araraquara, SP - Brazil
[2] Polytech Montreal, Dept Genie Phys, Montreal, PQ H3C 3A7 - Canada
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 - USA
Total Affiliations: 3
Document type: Journal article
Source: Journal of Physical Chemistry Letters; v. 11, n. 9, p. 3257-3262, MAY 7 2020.
Web of Science Citations: 0
Abstract

The structure of electrical double layers at electrified interfaces is of utmost importance for electrochemical energy storage as well as printable, flexible, and bioelectronic devices, such as ion-gated transistors (IGTs). Here we report a study based on atomic force microscopy force-distance profiling on electrical double layers forming at the interface between the ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide and sol-gel films of mesoporous tungsten oxide. We successfully followed, under in operando conditions, the evolution of the arrangement of the ions at the interface with the tungsten oxide films used as channel materials in IGTs. Our work sheds light on the mechanism of operation of IGTs, thus offering the possibility of optimizing their performance. (AU)

FAPESP's process: 15/50526-4 - Electrolyte gating of metal oxide films:towards low power and printable electronics
Grantee:Marcelo Ornaghi Orlandi
Support Opportunities: Regular Research Grants
FAPESP's process: 16/09033-7 - Electrolyte-gated transistors based on WO3 films
Grantee:Martin Schwellberger Barbosa
Support Opportunities: Scholarships abroad - Research Internship - Doctorate
FAPESP's process: 14/27079-9 - Electrolyte-Gated transistors based on WO3 thin films: influence of the morphology and structure of the films on the device performance
Grantee:Martin Schwellberger Barbosa
Support Opportunities: Scholarships in Brazil - Doctorate