Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs

Autor(es)

Caetano, Clovis ^{[1, 2]} ; Teles, Lara Kuehl ^[1] ; Marques, Marcelo ^[1] ; Ferreira, Luiz G. ^[3]

Afiliação do(s) autor(es)

^[1] Inst Tecnol Aeronaut, BR-12228900 Sao Paulo - Brazil

^[2] Univ Fed Fronteira Sul, BR-85770000 Realeza, PR - Brazil

^[3] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Applied Physics; v. 107, n. 12 JUN 15 2010.
• Citações Web of Science: 3

Resumo

The thermodynamic properties of the magnetic semiconductors GaMnAs and GaCrAs are studied under biaxial strain. The calculations are based on the projector augmented wave method combined with the generalized quasichemical approach to treat the disorder and composition effects. Considering the influence of biaxial strain, we find a tendency to the suppression of binodal decomposition mainly for GaMnAs under compressive strain. For a substrate with a lattice constant 5% smaller than the one of GaAs, for GaMnAs, the solubility limit increases up to 40%. Thus, the strain can be a useful tool for tailoring magnetic semiconductors to the formation or not of embedded nanoclusters. (C) 2010 American Institute of Physics. {[}doi:10.1063/1.3448025] (AU)

• Processo FAPESP: 06/05858-0 - Estudo teórico de ligas semicondutoras com aplicações em spintrônica e optoeletrônica
• Beneficiário: Lara Kühl Teles
• Modalidade de apoio: Auxílio à Pesquisa - Jovens Pesquisadores