Advanced search
Start date
Betweenand
(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Biaxial strain-induced suppression of spinodal decomposition in GaMnAs and GaCrAs

Full text
Author(s):
Caetano, Clovis [1, 2] ; Teles, Lara Kuehl [1] ; Marques, Marcelo [1] ; Ferreira, Luiz G. [3]
Total Authors: 4
Affiliation:
[1] Inst Tecnol Aeronaut, BR-12228900 Sao Paulo - Brazil
[2] Univ Fed Fronteira Sul, BR-85770000 Realeza, PR - Brazil
[3] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo - Brazil
Total Affiliations: 3
Document type: Journal article
Source: Journal of Applied Physics; v. 107, n. 12 JUN 15 2010.
Web of Science Citations: 3
Abstract

The thermodynamic properties of the magnetic semiconductors GaMnAs and GaCrAs are studied under biaxial strain. The calculations are based on the projector augmented wave method combined with the generalized quasichemical approach to treat the disorder and composition effects. Considering the influence of biaxial strain, we find a tendency to the suppression of binodal decomposition mainly for GaMnAs under compressive strain. For a substrate with a lattice constant 5% smaller than the one of GaAs, for GaMnAs, the solubility limit increases up to 40%. Thus, the strain can be a useful tool for tailoring magnetic semiconductors to the formation or not of embedded nanoclusters. (C) 2010 American Institute of Physics. {[}doi:10.1063/1.3448025] (AU)

FAPESP's process: 06/05858-0 - Theoretical study of semiconductor alloys for applications in spintronics and optoelectronics
Grantee:Lara Kühl Teles
Support Opportunities: Research Grants - Young Investigators Grants