Analytical Model for the Dynamic Behavior of Triple-Gate Junctionless Nanowire Transistors

Autor(es)

Trevisoli, Renan ^[1] ; Doria, Rodrigo Trevisoli ^[1] ; de Souza, Michelly ^[1] ; Barraud, Sylvain ^[2] ; Vinet, Maud ^[2] ; Pavanello, Marcelo Antonio ^[1]

Afiliação do(s) autor(es)

^[1] Ctr Univ FEI, BR-09850901 Sao Bernardo Do Campo - Brazil

^[2] Commissariat Energie Atom & Energies Alternat, Lab Elect Technol Informat, F-38054 Grenoble - France

• Tipo de documento: Artigo Científico
• Fonte: IEEE TRANSACTIONS ON ELECTRON DEVICES; v. 63, n. 2, p. 856-863, FEB 2016.
• Citações Web of Science: 9

Resumo

This paper presents an analytical model for the intrinsic capacitances and transconductances of triple-gate junctionless nanowire transistors. The model is based on a surface-potential drain current model, which includes shortchannel effects, and accounts for the dependences on the device dimensions, doping concentration, and quantum effects. It is validated with 3-D Technology Computer-Aided Design (TCAD) simulations for several device characteristics and biases as well as with the experimental results. (AU)

• Processo FAPESP: 14/18041-8 - Caracterização elétrica e modelagem de dispositivos eletrônicos avançados
• Beneficiário: Renan Trevisoli Doria
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado