Polarization resolved photoluminescence in GaAs1-xBix/GaAs quantum wells

Autor(es)

Balanta, M. A. G. ; Orsi Gordo, V. ; Carvalho, A. R. H. ; Puustinen, J. ; Alghamdi, H. M. ; Henini, M. ; Galeti, H. V. A. ; Guina, M. ; Galvao Gobato, Y.

• Tipo de documento: Artigo Científico
• Fonte: Journal of Luminescence; v. 182, p. 49-52, FEB 2017.
• Citações Web of Science: 4

Resumo

We have investigated polarization resolved photoluminescence (PL) of GaAs1-xBix/GaAs quantum wells (QWs) with different Bi concentrations in the dilute range (x < 2%) using linearly polarized laser excitation under high magnetic fields up to 15 Tat low temperatures (T < 14 K). It was found that the spin polarization and excitonic g-factor of GaAs1-xBix/GaAs QWs increase with the increase of Bi concentration. Excitonic g(ex)-factors of 4 and 10 were obtained at 15 T for as-grown GaAs1-xBix/GaAs QWs with 1.2% and 1.9% Bi concentration, respectively. These values evidence an important increase of electron and hole g-factors with the introduction of Bi in GaAs. (C) 2016 Elsevier B.V. All rights reserved. (AU)

• Processo FAPESP: 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados
• Beneficiário: Helder Vinícius Avanço Galeti
• Linha de fomento: Auxílio à Pesquisa - Regular
• Processo FAPESP: 12/24055-6 - Propriedades óticas, elétricas e de spin de nanoestruturas e nanodispositivos semicondutores
• Beneficiário: Yara Galvão Gobato
• Linha de fomento: Auxílio à Pesquisa - Regular