| Full text | |
| Author(s): |
Balanta, M. A. G.
;
Orsi Gordo, V.
;
Carvalho, A. R. H.
;
Puustinen, J.
;
Alghamdi, H. M.
;
Henini, M.
;
Galeti, H. V. A.
;
Guina, M.
;
Galvao Gobato, Y.
Total Authors: 9
|
| Document type: | Journal article |
| Source: | Journal of Luminescence; v. 182, p. 49-52, FEB 2017. |
| Web of Science Citations: | 4 |
| Abstract | |
We have investigated polarization resolved photoluminescence (PL) of GaAs1-xBix/GaAs quantum wells (QWs) with different Bi concentrations in the dilute range (x < 2%) using linearly polarized laser excitation under high magnetic fields up to 15 Tat low temperatures (T < 14 K). It was found that the spin polarization and excitonic g-factor of GaAs1-xBix/GaAs QWs increase with the increase of Bi concentration. Excitonic g(ex)-factors of 4 and 10 were obtained at 15 T for as-grown GaAs1-xBix/GaAs QWs with 1.2% and 1.9% Bi concentration, respectively. These values evidence an important increase of electron and hole g-factors with the introduction of Bi in GaAs. (C) 2016 Elsevier B.V. All rights reserved. (AU) | |
| FAPESP's process: | 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices |
| Grantee: | Helder Vinícius Avanço Galeti |
| Support Opportunities: | Regular Research Grants |
| FAPESP's process: | 12/24055-6 - Optical, electrical and spin properties of semiconductor nanostructures and nanodevices |
| Grantee: | Yara Galvão Gobato |
| Support Opportunities: | Regular Research Grants |