A New Method for Series Resistance Extraction of Nanometer MOSFETs

Autor(es)

Trevisoli, Renan ; Doria, Rodrigo Trevisoli ; de Souza, Michelly ; Barraud, Sylvain ; Vinet, Maud ; Casse, Mikael ; Reimbold, Gilles ; Faynot, Olivier ; Ghibaudo, Gerard ; Pavanello, Marcelo Antonio

• Tipo de documento: Artigo Científico
• Fonte: IEEE TRANSACTIONS ON ELECTRON DEVICES; v. 64, n. 7, p. 2797-2803, JUL 2017.
• Citações Web of Science: 4

Resumo

This paper presents a new method for the series resistance extraction in ultimate MOSFETs using a single drain current versus gate voltage characteristic curve. The method is based on the Y-function curve, such that the series resistance is obtained through the curve of the total resistance as a function of the inverse of the Y-function. It includes both first-and second-order mobility degradation factors. To validate the proposed method, numerical simulations have been performed for devices of different characteristics. Besides, the method applicability has been demonstrated for experimental silicon nanowires and FinFETs. Apart from that, devices with different channel lengths can be used to estimate the mobility degradation factor influence. (AU)

• Processo FAPESP: 14/18041-8 - Caracterização elétrica e modelagem de dispositivos eletrônicos avançados
• Beneficiário: Renan Trevisoli Doria
• Modalidade de apoio: Bolsas no Brasil - Pós-Doutorado