Characterizing BJTs using the Early voltage in the forward active mode

Autor(es)

Costa, Luciano da F. ^[1] ; Silva, Filipi Nascimento ^[1] ; Comin, Cesar H. ^[2]

Afiliação do(s) autor(es)

^[1] Univ Sao Paulo, Sao Carlos Inst Phys, Ave Trabalhador Sao Carlense 400, BR-13566590 Sao Carlos, SP - Brazil

^[2] Univ Fed Sao Carlos, Dept Comp Sci, Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS; v. 46, n. 4, p. 978-986, APR 2018.
• Citações Web of Science: 0

Resumo

Bipolar junction transistors (BJTs) have been at the core of linear electronics from its beginnings. Here, we suggest an Early-based inspired geometric model of BJT devices and its application to derive models of related electronic circuits (more specifically a common-emitter configuration). The approach involves using a beam of isolines converging at the Early voltage as the model of a BJT. The angles of the isolines are experimentally verified often to vary almost linearly with the base current. A numerical methodology is suggested for the Early voltage estimation and applied to 12 real-world small signal NPN BJTs. Interesting results are obtained, including the identification of diverse Early voltage values for different BJT types and estimation of transfer functions. (AU)

• Processo FAPESP: 15/18942-8 - Associando redes complexas com espaços efetivos de atributos
• Beneficiário: Cesar Henrique Comin
• Linha de fomento: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 15/08003-4 - Abordagem de redes complexas em e-Science e dados dinâmicos
• Beneficiário: Filipi Nascimento Silva
• Linha de fomento: Bolsas no Brasil - Pós-Doutorado
• Processo FAPESP: 11/50761-2 - Modelos e métodos de e-Science para ciências da vida e agrárias
• Beneficiário: Roberto Marcondes Cesar Junior
• Linha de fomento: Auxílio à Pesquisa - Temático