Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

Autor(es)

Gomes, Tiago C. ^[1] ; Kumar, Dinesh ^[2] ; Fugikawa-Santos, Lucas ^[3] ; Alves, Neri ^[1] ; Kettle, Jeff ^[2]

Afiliação do(s) autor(es)

^[1] UNESP Sao Paulo State Univ, Sch Technol & Sci, BR-19060900 Presidente Prudente - Brazil

^[2] Bangor Univ, Sch Elect Engn, Bangor LL57 2DG, Gwynedd - Wales

^[3] UNESP Sao Paulo State Univ, Inst Geosci & Exact Sci, BR-13506900 Rio Claro - Brazil

• Tipo de documento: Artigo Científico
• Fonte: ACS COMBINATORIAL SCIENCE; v. 21, n. 5, p. 370-379, MAY 2019.
• Citações Web of Science: 1

Resumo

The present study reports a two-level multivariate analysis to optimize the production of anodized aluminum oxide (Al2O3) dielectric films for zinc oxide thin-film transistors (TFTs). Fourteen performance parameters were measured and analysis of variance (ANOVA) of the combined responses has been applied to identify how the Al2O3 dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodization process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this ``multivariate{''} approach could be adopted more widely by the industry to improve the reliability and performance of such devices. (AU)

• Processo FAPESP: 14/13904-8 - Estudo de transistores à base de ZnO e TIPs-Pentaceno para uso em inversores híbridos impressos
• Beneficiário: Tiago Carneiro Gomes
• Modalidade de apoio: Bolsas no Brasil - Doutorado
• Processo FAPESP: 16/03484-7 - Estudos de estabilidade em transistores obtidos por spray ultrassônico e pirólise de precursores orgânicos de ZnO.
• Beneficiário: Tiago Carneiro Gomes
• Modalidade de apoio: Bolsas no Exterior - Estágio de Pesquisa - Doutorado