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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis

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Author(s):
Gomes, Tiago C. [1] ; Kumar, Dinesh [2] ; Fugikawa-Santos, Lucas [3] ; Alves, Neri [1] ; Kettle, Jeff [2]
Total Authors: 5
Affiliation:
[1] UNESP Sao Paulo State Univ, Sch Technol & Sci, BR-19060900 Presidente Prudente - Brazil
[2] Bangor Univ, Sch Elect Engn, Bangor LL57 2DG, Gwynedd - Wales
[3] UNESP Sao Paulo State Univ, Inst Geosci & Exact Sci, BR-13506900 Rio Claro - Brazil
Total Affiliations: 3
Document type: Journal article
Source: ACS COMBINATORIAL SCIENCE; v. 21, n. 5, p. 370-379, MAY 2019.
Web of Science Citations: 1
Abstract

The present study reports a two-level multivariate analysis to optimize the production of anodized aluminum oxide (Al2O3) dielectric films for zinc oxide thin-film transistors (TFTs). Fourteen performance parameters were measured and analysis of variance (ANOVA) of the combined responses has been applied to identify how the Al2O3 dielectric fabrication process influences the electrical properties of the TFTs. Using this approach, the levels for the manufacturing factors to achieve optimal overall device performance have been identified and ranked. The cross-checked analysis of the TFT performance parameters demonstrated that the appropriate control of the anodization process can have a higher impact on TFT performance than the use of traditional methods of surface treatment of the dielectric layer. Flexible electronics applications are expected to grow substantially over the next 10 years. Given the complexity and challenges of new flexible electronics components, this ``multivariate{''} approach could be adopted more widely by the industry to improve the reliability and performance of such devices. (AU)

FAPESP's process: 14/13904-8 - Investigations on ZnO and TIPs-Pentacene based transistors for printed hybrid inverter circuit
Grantee:Tiago Carneiro Gomes
Support Opportunities: Scholarships in Brazil - Doctorate
FAPESP's process: 16/03484-7 - Stability studies in transistors based on ZnO films produced by ultrasonic spray pyrolysis.
Grantee:Tiago Carneiro Gomes
Support Opportunities: Scholarships abroad - Research Internship - Doctorate