Transparent/flexible transistors: from the study of transport properties to the development of circuitries

• Grant number: 19/08019-9
• Support Opportunities: Regular Research Grants
• Start date: August 01, 2019
• End date: July 31, 2021
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Lucas Fugikawa Santos
• Grantee: Lucas Fugikawa Santos
• Host Institution: Instituto de Geociências e Ciências Exatas (IGCE). Universidade Estadual Paulista (UNESP). Campus de Rio Claro. Rio Claro , SP, Brazil
• Associated researchers: Giovani Fornereto Gozzi

Abstract

Thin-film transistors (TFTs) based on metal oxides such as zinc oxide (ZnO) can be solution processed, achieving superior performance than commercially available amorphous silicon-based devices. In addition to better performance, these materials have the advantage of allowing the coverage of large areas, low production cost, transparency in the visible region and, in some situations, compatibility with flexible substrates. However, they still exhibit a variability of their electrical properties with exposure to oxygen, moisture and ultraviolet (UV) radiation, which necessitates a more in-depth study of their properties. In addition, the morphology of the films and the architecture of the device can be determinant in their performance. The present work aims at the optimization of the manufacturing parameters of TFTs based on metallic oxides such as ZnO and its ternary and quaternary compounds of other metals (In, Al, Sn, Cu, Ga, etc.) by using design of experiments (DOE) and analysis of variance (ANOVA) of the performance results obtained. To do so, we will use our previous experience in the development of high performance TFT manufacturing techniques with a high degree of reproducibility of the obtained results. After optimizing the construction parameters, we will try to extend the experience for the manufacture of devices on flexible and/or transparent substrates, as well as to build logic devices that can be used as a basis for digital circuits. The experience acquired during the processes to be studied will also allow the expansion of the range of TFT applications, such as in sensor units of chemical substances of technological interest. (AU)

Scientific publications

(9)

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

LIMA, GUILHERME R.; BRAGA, JOAO P.; GOZZI, GIOVANI; FUGIKAWA-SANTOS, LUCAS. On the reproducibility of spray-coated ZnO thin-film transistors. MRS ADVANCES, v. 5, n. 35-36, SI, p. 1859-1866, 2020. (19/08019-9)

BRAGA, JOAO P.; AMORIM, CLEBER A.; DE LIMA, GUILHERME R.; GOZZI, GIOVANI; FUGIKAWA-SANTOS, LUCAS. The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 151, p. 6-pg., 2022-08-04. (14/50869-6, 19/08019-9)

DE LIMA, GUILHERME R.; GOZZI, GIOVANI; FUGIKAWA-SANTOS, LUCAS. ock-in amplifier as an alternative for reading Radio-Frequency identification (RFID) tags in sensing application. Instrumentation Science & Technology, v. 50, n. 3, SEP 2021. (19/08019-9)

LIMA, GUILHERME R.; BRAGA, JOAO P.; GOZZI, GIOVANI; FUGIKAWA-SANTOS, LUCAS. On the reproducibility of spray-coated ZnO thin-film transistors. MRS ADVANCES, v. 5, n. 35-36, p. 8-pg., 2020-01-01. (19/08019-9)

GOMES, TIAGO C.; KUMAR, DINESH; ALVES, NERI; KETTLE, JEFF; FUGIKAWA-SANTOS, LUCAS. The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, n. 159, MAY 2020. (19/08019-9, 14/13904-8, 16/03484-7, 19/05620-3, 19/01671-2)

VIEIRA, DOUGLAS HENRIQUE; OZORIO, MAIZA DA SILVA; NOGUEIRA, GABRIEL LEONARDO; FUGIKAWA-SANTOS, LUCAS; ALVES, NERI. UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v. 121, JAN 2021. (18/04169-3, 19/01671-2, 19/08019-9)

VIEIRA, DOUGLAS HENRIQUE; NOGUEIRA, GABRIEL LEONARDO; MORAIS, ROGERIO MIRANDA; FUGIKAWA-SANTOS, LUCAS; SEIDEL, KELI FABIANA; ALVES, NERI. ZnO-based electrolyte-gated transistor (EGT) applied as multiparametric UV-sensing device. SENSORS AND ACTUATORS A-PHYSICAL, v. 347, p. 9-pg., 2022-11-11. (19/08019-9, 20/12282-4, 18/02037-2, 18/04169-3)

GOMES, TIAGO C.; KUMAR, DINESH; ALVES, NERI; KETTLE, JEFF; FUGIKAWA-SANTOS, LUCAS. The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors. JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, v. N/A, n. 159, p. 8-pg., 2020-05-01. (19/01671-2, 16/03484-7, 19/05620-3, 14/13904-8, 19/08019-9)

VIEIRA, DOUGLAS HENRIQUE; NOGUEIRA, GABRIEL LEONARDO; NASCIMENTO, MAYK RODRIGUES; FUGIKAWA-SANTOS, LUCAS; ALVES, NERI. Charge-trap memory effect in spray deposited ZnO-based electrolyte-gated transistors operating at low voltage. CURRENT APPLIED PHYSICS, v. 53, p. 8-pg., 2023-07-08. (20/12282-4, 19/08019-9)