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Investigations on ZnO and TIPs-Pentacene based transistors for printed hybrid inverter circuit

Grant number: 14/13904-8
Support type:Scholarships in Brazil - Doctorate
Effective date (Start): January 01, 2015
Effective date (End): March 04, 2018
Field of knowledge:Physical Sciences and Mathematics - Physics
Cooperation agreement: Coordination of Improvement of Higher Education Personnel (CAPES)
Principal Investigator:Neri Alves
Grantee:Tiago Carneiro Gomes
Home Institution: Faculdade de Ciências e Tecnologia (FCT). Universidade Estadual Paulista (UNESP). Campus de Presidente Prudente. Presidente Prudente , SP, Brazil
Associated scholarship(s):16/03484-7 - Stability studies in transistors based on ZnO films produced by ultrasonic spray pyrolysis, BE.EP.DR


In this project we will study the fabrication of organic and inorganic thin-film transistors (TFT) for the development of flexible inverter circuits. Flexible, lightweight and eventually transparent circuits are some of the main trends on organic electronic devices. The simplest and one of the most important circuits is the inverter which is the building block for digital electronics. Thus, the main purpose of this project is to fabricate and characterize organic p-type semiconducting devices and n-type inorganic transistors for the production of flexible hybrid complementary inverter circuits (CIC-Hi). According to the literature CIC-Hi are the most promising circuits due to their good stability, reproducibility and simple architecture and operation. Here, we aim the use of 6,13-Bis(triisopropylsi¬lylethynyl)pentaceno, named TIPS-pentacene and poly(3-hexylthiophene) (P3HT) for the production of organic p-type TFT and zinc oxide-based materials for the fabrication of n-type inorganic ones. The development of flexible CIC-Hi requires the use of printing techniques (e.g. inkjet, screen printing and spraying) in which the above mentioned materials are compatible with. Thus, we propose the production and study of TFTs containing the active layer deposited by printing techniques. These devices will be fabricated using anodic aluminum oxide as the dielectric layer. The device operation will be evaluated in terms of the TFT environmental stability, bias stress and the influence of different surface treatments. Finally, we aim to contribute to development of printed, flexible and transparent organic electronics. (AU)

Scientific publications
(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)
GOMES, TIAGO C.; KUMAR, DINESH; FUGIKAWA-SANTOS, LUCAS; ALVES, NERI; KETTLE, JEFF. Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by Multivariate Analysis. ACS COMBINATORIAL SCIENCE, v. 21, n. 5, p. 370-379, MAY 2019. Web of Science Citations: 1.
Academic Publications
(References retrieved automatically from State of São Paulo Research Institutions)
GOMES, Tiago Carneiro. Estudo de transistores a base de óxido de zinco visando aplicações em sensor de radiação ultravioleta. 2018. 172 f. Doctoral Thesis - Universidade Estadual Paulista "Júlio de Mesquita Filho" Faculdade de Ciências (FC).

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