Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

Autor(es):Mostrar menos -

Alghamdi, Haifa ^{[1, 2]} ; Gordo, Vanessa Orsi ^[3] ; Schmidbauer, Martin ^[4] ; Felix, Jorlandio F. ^[5] ; Alhassan, Sultan ^[1] ; Alhassni, Amra ^[1] ; Prando, Gabriela Augusta ^[3] ; Coelho-Junior, Horacio ^[6] ; Gunes, Mustafa ^[7] ; Avanco Galeti, Helder Vinicius ^[8] ; Gobato, Yara Galvao ^[3] ; Henini, Mohamed ^[1]

Afiliação do(s) autor(es)

^[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England

^[2] Univ Jedda, Fac Sci Al Faisaliah, Phys Dept, Minist Educ Kingdom Saudi Arabia, Jeddah 21959 - Saudi Arabia

^[3] Univ Fed Sao Carlos UFSCar, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil

^[4] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin - Germany

^[5] Univ Brasilia, Inst Fis, Nucleo Fis Aplicada, BR-70910900 Brasilia, DF - Brazil

^[6] Urca, Ctr Brasileiro Pesquisas Fis, Rua Dr Xavier Sigaud 150, BR-22290180 Rio De Janeiro, RJ - Brazil

^[7] Adana Parslan Turkes Sci & Technol Univ, Engn Fac, Dept Mat Engn, TR-01250 Adana - Turkey

^[8] Univ Fed Sao Carlos UFSCar, Dept Engn Eletr, BR-13565905 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Journal of Applied Physics; v. 127, n. 12 MAR 31 2020.
• Citações Web of Science: 1

Resumo

The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1-xBix/GaAs single quantum wells grown on (001) and (311)B substrates by molecular beam epitaxy was investigated. The structural properties were investigated by high-resolution x-ray diffraction (HR-XRD) and Transmission Electron Microscopy. The Bi concentration profiles were determined by simulating the HR-XRD 2 theta-omega scans using dynamical scattering theory to estimate the Bi content, lattice coherence, and quality of the interfaces. The Bi composition was found to be similar for both samples grown on (001) and (311)B GaAs substrates. However, the simulations indicate that the Bi composition is not only limited in the GaAsBi quantum well (QW) layer but also extends out of the GaAsBi QW toward the GaAs barrier. Photoluminescence (PL) measurements were performed as a function of temperature and laser power for samples with a nominal Bi composition of 3%. PL spectra showed that (001) and (311)B samples have different peak energies at 1.23eV and 1.26eV, respectively, at 10K. After RTA at 300 degrees C for 2min, the PL intensity of (311)B and (001) samples was enhanced by factors of similar to 2.5 and 1.75, respectively. However, for the (001) and (311)B FA samples, an enhancement of the PL intensity by a factor of only 1.5 times could be achieved. The enhancement of PL intensity in annealed samples was interpreted in terms of PL activation energies, with a reduction in the alloy disorder and an increase in the Bi cluster. (AU)

• Processo FAPESP: 19/07442-5 - Nanostruturas semicondutoras bismuto diluídas e novos materiais para aplicações no infravermelho médio
• Beneficiário: Helder Vinícius Avanço Galeti
• Modalidade de apoio: Auxílio à Pesquisa - Regular
• Processo FAPESP: 18/01808-5 - Propriedades ópticas e de transporte em altos campos magnéticos de heteroestruturas e dispositivos semicondutores baseados em materiais bidimensionais (2d)
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Bolsas no Exterior - Pesquisa
• Processo FAPESP: 16/10668-7 - Propriedades óticas, magneto-óticas, de transporte e magneto-transporte de materiais semicondutores bidimensionais baseados em materiais de transição dicalcogenados
• Beneficiário: Yara Galvão Gobato
• Modalidade de apoio: Auxílio à Pesquisa - Regular