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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE

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Author(s):
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Alghamdi, Haifa [1, 2] ; Gordo, Vanessa Orsi [3] ; Schmidbauer, Martin [4] ; Felix, Jorlandio F. [5] ; Alhassan, Sultan [1] ; Alhassni, Amra [1] ; Prando, Gabriela Augusta [3] ; Coelho-Junior, Horacio [6] ; Gunes, Mustafa [7] ; Avanco Galeti, Helder Vinicius [8] ; Gobato, Yara Galvao [3] ; Henini, Mohamed [1]
Total Authors: 12
Affiliation:
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[2] Univ Jedda, Fac Sci Al Faisaliah, Phys Dept, Minist Educ Kingdom Saudi Arabia, Jeddah 21959 - Saudi Arabia
[3] Univ Fed Sao Carlos UFSCar, Dept Fis, BR-13565905 Sao Carlos, SP - Brazil
[4] Leibniz Inst Kristallzuchtung, Max Born Str 2, D-12489 Berlin - Germany
[5] Univ Brasilia, Inst Fis, Nucleo Fis Aplicada, BR-70910900 Brasilia, DF - Brazil
[6] Urca, Ctr Brasileiro Pesquisas Fis, Rua Dr Xavier Sigaud 150, BR-22290180 Rio De Janeiro, RJ - Brazil
[7] Adana Parslan Turkes Sci & Technol Univ, Engn Fac, Dept Mat Engn, TR-01250 Adana - Turkey
[8] Univ Fed Sao Carlos UFSCar, Dept Engn Eletr, BR-13565905 Sao Carlos, SP - Brazil
Total Affiliations: 8
Document type: Journal article
Source: Journal of Applied Physics; v. 127, n. 12 MAR 31 2020.
Web of Science Citations: 1
Abstract

The effect of Furnace Annealing (FA) and Rapid Thermal annealing (RTA) on the structural and optical properties of GaAs1-xBix/GaAs single quantum wells grown on (001) and (311)B substrates by molecular beam epitaxy was investigated. The structural properties were investigated by high-resolution x-ray diffraction (HR-XRD) and Transmission Electron Microscopy. The Bi concentration profiles were determined by simulating the HR-XRD 2 theta-omega scans using dynamical scattering theory to estimate the Bi content, lattice coherence, and quality of the interfaces. The Bi composition was found to be similar for both samples grown on (001) and (311)B GaAs substrates. However, the simulations indicate that the Bi composition is not only limited in the GaAsBi quantum well (QW) layer but also extends out of the GaAsBi QW toward the GaAs barrier. Photoluminescence (PL) measurements were performed as a function of temperature and laser power for samples with a nominal Bi composition of 3%. PL spectra showed that (001) and (311)B samples have different peak energies at 1.23eV and 1.26eV, respectively, at 10K. After RTA at 300 degrees C for 2min, the PL intensity of (311)B and (001) samples was enhanced by factors of similar to 2.5 and 1.75, respectively. However, for the (001) and (311)B FA samples, an enhancement of the PL intensity by a factor of only 1.5 times could be achieved. The enhancement of PL intensity in annealed samples was interpreted in terms of PL activation energies, with a reduction in the alloy disorder and an increase in the Bi cluster. (AU)

FAPESP's process: 19/07442-5 - BISMIDES semiconductor nanostructures and novel materials for mid infrared applications
Grantee:Helder Vinícius Avanço Galeti
Support type: Regular Research Grants
FAPESP's process: 18/01808-5 - Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials
Grantee:Yara Galvão Gobato
Support type: Scholarships abroad - Research
FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants