Gobato, Y. Galvao
Andrade, M. B.
Número total de Autores: 8
Afiliação do(s) autor(es):
 Univ Sao Paulo, Fac Zootecnia & Engn Alimentos, Dept Ciencias Basicas, BR-13635900 Pirassununga, SP - Brazil
 Tampere Univ, Phys Unit, Optoelect Res Ctr, Korkeakoulunkatu 3, Tampere 33720 - Finland
 Univ Fed Sao Carlos UFSCAR, Dept Fis, BR-13560905 Carlos, SP - Brazil
 Univ Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP - Brazil
Número total de Afiliações: 4
Tipo de documento:
Applied Physics Letters;
MAY 18 2020.
Citações Web of Science:
We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to similar to 0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532nm, 633nm, and 785nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bi-n clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks. (AU)