Raman spectroscopy of GaSb1-xBix alloys with high Bi content

Autor(es)

Souto, S. ^[1] ; Hilska, J. ^[2] ; Gobato, Y. Galvao ^[3] ; Souza, D. ^[3] ; Andrade, M. B. ^[4] ; Koivusalo, E. ^[2] ; Puustinen, J. ^[2] ; Guina, M. ^[2]

Afiliação do(s) autor(es)

^[1] Univ Sao Paulo, Fac Zootecnia & Engn Alimentos, Dept Ciencias Basicas, BR-13635900 Pirassununga, SP - Brazil

^[2] Tampere Univ, Phys Unit, Optoelect Res Ctr, Korkeakoulunkatu 3, Tampere 33720 - Finland

^[3] Univ Fed Sao Carlos UFSCAR, Dept Fis, BR-13560905 Carlos, SP - Brazil

^[4] Univ Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP - Brazil

• Tipo de documento: Artigo Científico
• Fonte: Applied Physics Letters; v. 116, n. 20 MAY 18 2020.
• Citações Web of Science: 0

Resumo

We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to similar to 0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532nm, 633nm, and 785nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bi-n clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks. (AU)

• Processo FAPESP: 14/50513-7 - Propriedades de transporte de heteroestruturas semicondutoras III-Bi-V para dispositivos fotônicos avançados
• Beneficiário: Helder Vinícius Avanço Galeti
• Linha de fomento: Auxílio à Pesquisa - Regular
• Processo FAPESP: 16/10668-7 - Propriedades óticas, magneto-óticas, de transporte e magneto-transporte de materiais semicondutores bidimensionais baseados em materiais de transição dicalcogenados
• Beneficiário: Yara Galvão Gobato
• Linha de fomento: Auxílio à Pesquisa - Regular