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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Raman spectroscopy of GaSb1-xBix alloys with high Bi content

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Author(s):
Souto, S. [1] ; Hilska, J. [2] ; Gobato, Y. Galvao [3] ; Souza, D. [3] ; Andrade, M. B. [4] ; Koivusalo, E. [2] ; Puustinen, J. [2] ; Guina, M. [2]
Total Authors: 8
Affiliation:
[1] Univ Sao Paulo, Fac Zootecnia & Engn Alimentos, Dept Ciencias Basicas, BR-13635900 Pirassununga, SP - Brazil
[2] Tampere Univ, Phys Unit, Optoelect Res Ctr, Korkeakoulunkatu 3, Tampere 33720 - Finland
[3] Univ Fed Sao Carlos UFSCAR, Dept Fis, BR-13560905 Carlos, SP - Brazil
[4] Univ Sao Paulo, Sao Carlos Inst Phys, POB 369, BR-13560970 Sao Carlos, SP - Brazil
Total Affiliations: 4
Document type: Journal article
Source: Applied Physics Letters; v. 116, n. 20 MAY 18 2020.
Web of Science Citations: 0
Abstract

We report on the crystal morphology and Raman scattering features of high structural quality GaSb1-xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to similar to 0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532nm, 633nm, and 785nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bi-n clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks. (AU)

FAPESP's process: 14/50513-7 - Tailoring the transport and optical properties if III-Bi-V nanostructures for advanced photonic devices
Grantee:Helder Vinícius Avanço Galeti
Support type: Regular Research Grants
FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants