| Texto completo | |
| Autor(es): |
Al Mashary, Faisal S.
[1, 2]
;
Felix, Jorlandio F.
[3]
;
Ferreira, Sukarno O.
[4]
;
de Souza, Daniele
[5]
;
Gobato, Yara G.
[5]
;
Chauhan, Jasbinder
[1]
;
Alexeeva, Natalia
[1]
;
Henini, Mohamed
[1]
;
Albadri, Abdulrahman M.
[6]
;
Alyamani, Ahmed Y.
[6]
Número total de Autores: 10
|
| Afiliação do(s) autor(es): | [1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[2] Qassim Univ, Coll Sci, Dept Phys, Buraydah 14452 - Saudi Arabia
[3] Univ Brasilia, Inst Fis, Nucl Fis Aplicada, BR-70910900 Brasilia, DF - Brazil
[4] Univ Fed Vicosa, Dept Fis, BR-36570900 Vicosa, MG - Brazil
[5] Univ Fed Sao Carlos, Dept Fis, Sao Carlos, SP - Brazil
[6] King Abdulaziz City Sci & Technol, Natl Ctr Nanotechnol & Adv Mat, Riyadh 11442 - Saudi Arabia
Número total de Afiliações: 6
|
| Tipo de documento: | Artigo Científico |
| Fonte: | MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS; v. 259, SEP 2020. |
| Citações Web of Science: | 0 |
| Resumo | |
The properties of In-doped TiO2 grown by Pulsed Laser Deposition on (1 0 0) and (3 1 1)B GaAs substrates have been investigated. X-ray diffraction and photoluminescence results have shown that samples grown on (3 1 1)B GaAs planes have better crystallographic properties than those grown on (1 0 0). Both anatase and rutile phases were detected in samples with lower In-doping (In = 5 nm) while only rutile phase was observed for higher In-doped samples (In = 15 nm). Furthermore, In-doping adversely affected the electrical properties of samples grown on (1 0 0) substrates while it enhanced those of (3 1 1)B samples. Two shallow defects were detected in all samples except for (3 1 1)B sample (In = 15 nm) where three shallow defects were observed. The presence of more shallow defects in this sample is evidenced by a red-shift in the absorption spectrum. It was concluded that sample (3 1 1)B (In = 15 nm) is best among all other samples and makes it more suitable for solar cell applications. (AU) | |
| Processo FAPESP: | 18/01808-5 - Propriedades ópticas e de transporte em altos campos magnéticos de heteroestruturas e dispositivos semicondutores baseados em materiais bidimensionais (2d) |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Bolsas no Exterior - Pesquisa |
| Processo FAPESP: | 16/10668-7 - Propriedades óticas, magneto-óticas, de transporte e magneto-transporte de materiais semicondutores bidimensionais baseados em materiais de transição dicalcogenados |
| Beneficiário: | Yara Galvão Gobato |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |