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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Investigation of the structural, optical and electrical properties of indium-doped TiO2 thin films grown by Pulsed Laser Deposition technique on low and high index GaAs planes

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Author(s):
Al Mashary, Faisal S. [1, 2] ; Felix, Jorlandio F. [3] ; Ferreira, Sukarno O. [4] ; de Souza, Daniele [5] ; Gobato, Yara G. [5] ; Chauhan, Jasbinder [1] ; Alexeeva, Natalia [1] ; Henini, Mohamed [1] ; Albadri, Abdulrahman M. [6] ; Alyamani, Ahmed Y. [6]
Total Authors: 10
Affiliation:
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD - England
[2] Qassim Univ, Coll Sci, Dept Phys, Buraydah 14452 - Saudi Arabia
[3] Univ Brasilia, Inst Fis, Nucl Fis Aplicada, BR-70910900 Brasilia, DF - Brazil
[4] Univ Fed Vicosa, Dept Fis, BR-36570900 Vicosa, MG - Brazil
[5] Univ Fed Sao Carlos, Dept Fis, Sao Carlos, SP - Brazil
[6] King Abdulaziz City Sci & Technol, Natl Ctr Nanotechnol & Adv Mat, Riyadh 11442 - Saudi Arabia
Total Affiliations: 6
Document type: Journal article
Source: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS; v. 259, SEP 2020.
Web of Science Citations: 0
Abstract

The properties of In-doped TiO2 grown by Pulsed Laser Deposition on (1 0 0) and (3 1 1)B GaAs substrates have been investigated. X-ray diffraction and photoluminescence results have shown that samples grown on (3 1 1)B GaAs planes have better crystallographic properties than those grown on (1 0 0). Both anatase and rutile phases were detected in samples with lower In-doping (In = 5 nm) while only rutile phase was observed for higher In-doped samples (In = 15 nm). Furthermore, In-doping adversely affected the electrical properties of samples grown on (1 0 0) substrates while it enhanced those of (3 1 1)B samples. Two shallow defects were detected in all samples except for (3 1 1)B sample (In = 15 nm) where three shallow defects were observed. The presence of more shallow defects in this sample is evidenced by a red-shift in the absorption spectrum. It was concluded that sample (3 1 1)B (In = 15 nm) is best among all other samples and makes it more suitable for solar cell applications. (AU)

FAPESP's process: 18/01808-5 - Optical and Transport Properties in High Magnetic Fields of Semiconductor Heterostructures and Devices based on Two Dimensional Materials
Grantee:Yara Galvão Gobato
Support type: Scholarships abroad - Research
FAPESP's process: 16/10668-7 - Optical and Transport Properties of two-dimensional semicondutors based on transition metal dichalcogenides
Grantee:Yara Galvão Gobato
Support type: Regular Research Grants