| Texto completo | |
| Autor(es): |
Tito, M. A.
;
Pusep, Yu. A.
Número total de Autores: 2
|
| Tipo de documento: | Artigo Científico |
| Fonte: | SUPERLATTICES AND MICROSTRUCTURES; v. 104, p. 156-161, APR 2017. |
| Citações Web of Science: | 1 |
| Resumo | |
Determination of mobility edge in presence of metal-to-insulator transition Recombination dynamics of excitons was studied in multiple narrow quantum well GaAs/AlGaAs heterostructures. Disorder generated by interface roughness considerably affects transport of the conduction band electrons and at appropriate quantum well width results in a metal-to insulator transition. Localization of the electrons was found to be responsible for the exciton recombination time measured in the vicinity of the metal-to-insulator transition. Measurement of the exciton recombination time as a function of the energy allowed for determination of the critical energy of the mobility edge attributed to the conduction band electrons. The mobility edge energy obtained in this way demonstrates intersection with the Fermi level energy at the critical disorder corresponding to the metal-to-insulator transition. (C) 2017 Elsevier Ltd. All rights reserved. (AU) | |
| Processo FAPESP: | 15/16191-5 - Pesquisas em novos materiais envolvendo campos magnéticos intensos e baixas temperaturas |
| Beneficiário: | Gennady Gusev |
| Modalidade de apoio: | Auxílio à Pesquisa - Temático |
| Processo FAPESP: | 14/24288-6 - Dinâmica de excitons em campos magnéticos quânticos em sistemas eletrônicos multi-componentes |
| Beneficiário: | Iouri Poussep |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |