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(Reference retrieved automatically from Web of Science through information on FAPESP grant and its corresponding number as mentioned in the publication by the authors.)

Determination of mobility edge in presence of metal-to-insulator transition

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Author(s):
Tito, M. A. ; Pusep, Yu. A.
Total Authors: 2
Document type: Journal article
Source: SUPERLATTICES AND MICROSTRUCTURES; v. 104, p. 156-161, APR 2017.
Web of Science Citations: 1
Abstract

Determination of mobility edge in presence of metal-to-insulator transition Recombination dynamics of excitons was studied in multiple narrow quantum well GaAs/AlGaAs heterostructures. Disorder generated by interface roughness considerably affects transport of the conduction band electrons and at appropriate quantum well width results in a metal-to insulator transition. Localization of the electrons was found to be responsible for the exciton recombination time measured in the vicinity of the metal-to-insulator transition. Measurement of the exciton recombination time as a function of the energy allowed for determination of the critical energy of the mobility edge attributed to the conduction band electrons. The mobility edge energy obtained in this way demonstrates intersection with the Fermi level energy at the critical disorder corresponding to the metal-to-insulator transition. (C) 2017 Elsevier Ltd. All rights reserved. (AU)

FAPESP's process: 15/16191-5 - The research in new materials involving high magnetic fields and low temperatures
Grantee:Gennady Gusev
Support type: Research Projects - Thematic Grants
FAPESP's process: 14/24288-6 - Dynamics of excitons in quantized magnetic field in multi-component electron systems
Grantee:Iouri Poussep
Support type: Regular Research Grants