| Texto completo | |
| Autor(es): |
Gomes, Tiago C.
;
Kumar, Dinesh
;
Alves, Neri
;
Kettle, Jeff
;
Fugikawa-Santos, Lucas
Número total de Autores: 5
|
| Tipo de documento: | Artigo Científico |
| Fonte: | JOVE-JOURNAL OF VISUALIZED EXPERIMENTS; v. N/A, n. 159, p. 8-pg., 2020-05-01. |
| Resumo | |
Aluminum-oxide (Al2O3) is a low cost, easily processable and high dielectric constant insulating material that is particularly appropriate for use as the dielectric layer of thin-film transistors (TFTs). Growth of aluminum-oxide layers from anodization of metallic aluminum films is greatly advantageous when compared to sophisticated processes such as atomic layer deposition (ALD) or deposition methods that demand relatively high temperatures (above 300 degrees C) such as aqueous combustion or spray-pyrolysis. However, the electrical properties of the transistors are highly dependent on the presence of defects and localized states at the semiconductor/dielectric interface, which are strongly affected by the manufacturing parameters of the anodized dielectric layer. To determine how several fabrication parameters influence the device performance without performing all possible combination of factors, we used a reduced factorial analysis based on a Plackett-Burman design of experiments (DOE). The choice of this DOE permits the use of only 12 experimental runs of combinations of factors (instead of all 256 possibilities) to obtain the optimized device performance. The ranking of the factors by the effect on device responses such as the TFT mobility is possible by applying analysis of variance (ANOVA) to the obtained results. (AU) | |
| Processo FAPESP: | 19/01671-2 - Dispositivos híbridos impressos aplicados como fotodetectores de UV e sensores de gás |
| Beneficiário: | Neri Alves |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |
| Processo FAPESP: | 16/03484-7 - Estudos de estabilidade em transistores obtidos por spray ultrassônico e pirólise de precursores orgânicos de ZnO. |
| Beneficiário: | Tiago Carneiro Gomes |
| Modalidade de apoio: | Bolsas no Exterior - Estágio de Pesquisa - Doutorado |
| Processo FAPESP: | 19/05620-3 - Testes de stress elétrico de transistores de ZnO e IGZO baseados em um novo procedimento de ensaio |
| Beneficiário: | Lucas Fugikawa Santos |
| Modalidade de apoio: | Auxílio à Pesquisa - Pesquisador Visitante - Internacional |
| Processo FAPESP: | 14/13904-8 - Estudo de transistores à base de ZnO e TIPs-Pentaceno para uso em inversores híbridos impressos |
| Beneficiário: | Tiago Carneiro Gomes |
| Modalidade de apoio: | Bolsas no Brasil - Doutorado |
| Processo FAPESP: | 19/08019-9 - Transistores transparentes/flexíveis: do estudo de propriedades de transporte ao desenvolvimento de circuitos |
| Beneficiário: | Lucas Fugikawa Santos |
| Modalidade de apoio: | Auxílio à Pesquisa - Regular |