Structural analysis of semiconductor nanostructures using high resolution X-ray diffraction

• Grant number: 07/08609-3
• Support Opportunities: Regular Research Grants
• Start date: April 01, 2008
• End date: March 31, 2010
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Lisandro Pavie Cardoso
• Grantee: Lisandro Pavie Cardoso
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

In this project one intends to study the structual properties of epitaxial semiconductor nanostrutuctures obtained by Chemical Beam Epitaxy (CBE)by using High resolution X-ray Diffraction techniques. (AU)

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

DE MENEZES, ALAN S.; DOS SANTOS, ADENILSON O.; ALMEIDA, JULIANA M. A.; BORTOLETO, JOSE R. R.; COTTA, MONICA A.; MORELHAO, SERGIO L.; CARDOSO, LISANDRO P.. Direct Observation of Tetragonal Distortion in Epitaxial Structures through Secondary Peak Split in a Synchrotron Radiation Renninger Scan. Crystal Growth & Design, v. 10, n. 8, p. 3436-3441, AUG 2010. (07/08609-3)

LANG, ROSSANO; DE MENEZES, ALAN S.; DOS SANTOS, ADENILSON O.; REBOH, SHAY; MENESES, ELIERMES A.; AMARAL, LIVIO; CARDOSO, LISANDRO P.. X-ray Bragg-Surface Diffraction: A Tool to Study In-Plane Strain Anisotropy Due to Ion-Beam-Induced Epitaxial Crystallization in Fe+-Implanted Si(001). Crystal Growth & Design, v. 10, n. 10, p. 4363-4369, OCT 2010. (07/08609-3)