Development of high power lasers with emission in the spectral region of 800 to 1000 nm, based on hetero structures of GaAs/InGaAsP/InGaP

• Grant number: 98/14859-1
• Support Opportunities: Research Grants - Research Partnership for Technological Innovation - PITE
• Start date: March 01, 1999
• End date: February 28, 2001
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Wilson de Carvalho Junior
• Grantee: Wilson de Carvalho Junior
• Host Institution: Centro de Pesquisa e Desenvolvimento (CPqD). Campinas , SP, Brazil
• Company: Asga S/A
• City: Campinas

Abstract

This project sought to develop the manufacture of an encapsulated prototype of a powerful laser with emission in 808 nm, based on heterostructures of GaAs/InGaAsP/InGaP. The performance characteristics of the device were adapted to the applications for use in medical equipment and in Nd:YAG laser pumping. It was also sought to make viable the manufacture of lasers with emissions in 880 and 980 nm, aiming at applications in the pumping of solid state lasers and telecommunications. The performance characteristics envisaged were: 2 W of power in continuous mode (cw) with operating current of 3- 5 A, spectral width around 2 nm and beam divergence in the range of 40º and 10º in directions perpendicular and parallel to the active region, respectively. The project involved the collaboration of the laboratory of the Optoeletrônica do Convênio Fundação CPqD/ABTLuS, based in Campinas (SP), with AsGa Microeletrônica, a business located in Paulínia (SP). (AU)