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Guennadii Gusev | Institute Semiconductor Physics - União Soviética

Grant number: 93/02038-0
Support Opportunities:Research Grants - Visiting Researcher Grant - International
Start date: November 01, 1993
End date: October 31, 1994
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Pierre Basmaji
Grantee:Pierre Basmaji
Visiting researcher: Guennadii Gusev
Visiting researcher institution: Siberian Branch of the Russian Academy of Sciences (SB RAS), Russia
Host Institution: Instituto de Física e Química de São Carlos (IFQSC). Universidade de São Paulo (USP). São Carlos , SP, Brazil

Abstract

Experimental investigation of the transport effect at two-dimensional electron periodic and disordered lattice of the artificial scatteres fabricated by electron lithography. Investigation of the transition from weakly localized regime to strong localization in artificial potential. Study of Aharonov-Bohm effect in the array of ring and in the single ring. Investigation of Coulomb blocade effect in the semi-conductor nanostructure, and influence, of there interband irradiation on the transport in system with Coulomb blocade effect. (AU)

Articles published in Agência FAPESP Newsletter about the research grant:
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