1) characteristics of silicon oxynitrides made by ECR plasmas. 2) radiation hardening of oxynitrides formed by low nitrogen implantation into silicon prior to oxidation

• Grant number: 01/00892-1
• Support Opportunities: Research Grants - Meeting - Abroad
• Start date: March 25, 2001
• End date: March 30, 2001
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Principal Investigator: Jacobus Willibrordus Swart
• Grantee: Jacobus Willibrordus Swart
• Host Institution: Faculdade de Engenharia Elétrica e de Computação (FEEC). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil