Formation and characterization of the ni(pt)si and nisi for mos devices applications.

• Grant number: 02/06785-5
• Support Opportunities: Research Grants - Meeting - Brazil
• Start date: September 09, 2002
• End date: September 14, 2002
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Principal Investigator: Ioshiaki Doi
• Grantee: Ioshiaki Doi
• Host Institution: Faculdade de Engenharia Elétrica e de Computação (FEEC). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil