Proton radiation hardening study of of oxynitride gate nmosfets formed by low energy nitrogen implantation into silicon prior to oxidation.

• Grant number: 01/07398-2
• Support Opportunities: Research Grants - Meeting - Abroad
• Start date: September 10, 2001
• End date: September 14, 2001
• Field of knowledge: Engineering - Electrical Engineering - Electrical Materials
• Principal Investigator: Ioshiaki Doi
• Grantee: Ioshiaki Doi
• Host Institution: Faculdade de Engenharia Elétrica e de Computação (FEEC). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil