Influence of valence of doping element on local electronic and crystal structure in vanadium oxides: Time-Differential Perturbed Angular Correlations spectroscopy at ISOLDE

• Grant number: 18/18657-0
• Support Opportunities: Scholarships abroad - Research
• Start date: October 21, 2018
• End date: November 04, 2018
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Artur Wilson Carbonari
• Grantee: Artur Wilson Carbonari
• Host Investigator: Juliana Schell
• Host Institution: Instituto de Pesquisas Energéticas e Nucleares (IPEN). Secretaria de Desenvolvimento Econômico (São Paulo - Estado). São Paulo , SP, Brazil
• Institution abroad: European Organization for Nuclear Research (CERN), Switzerland

Abstract

Hyperfine interactions probed at different nuclei of implanted ions (acting as dopants) in vanadiumoxides (VO2 and V2O5) will be measured in order to understand, along with first-principlescalculations, the doping phenomenology at the nanoscopic scale and its consequence on the electric and magnetic properties of the host oxides. Vanadium oxides are particularly attractive due to the phase transitions and to the capacity of the vanadium ion to change its oxidation state, being such properties well adequate for applications on, e.g., chemical sensors, electrochemical energy storagevia the intercalation of Li-ions, catalytic and optoelectronic devices. At ISOLDE-CERN we will study the effects of the incorporation of selected dopants (Cd, In, Sn) using the radioactive nucleartechnique Perturbed Angular Correlations (PAC). Measurements will be performed as a function oftemperature to study the annealing of implantation defects and the dopant incorporation andstability, particularly probing its electronic configuration while interacting. This project is part of a larger and synergetic collaboration using a multitude of characterization techniques, where we specific aim unique local information that can be used to optimize doping device.

Scientific publications

(References retrieved automatically from Web of Science and SciELO through information on FAPESP grants and their corresponding numbers as mentioned in the publications by the authors)

SCHELL, J.; DANG, T. T.; CARBONARI, A. W.. Incorporation of Cd-Doping in SnO2. CRYSTALS, v. 10, n. 1, JAN 2020. (18/18657-0)

BURIMOVA, ANASTASIA; CARBONARI, ARTUR WILSON; DE LIMA, NICOLE PEREIRA; MIRANDA FILHO, ARNALDO ALVES; DOS SANTOS SOUZA, ALEXANDRE PINHO; NASCIMENTO SALES, TATIANE DA SILVA; FERREIRA, WANDERSON LOBATO; DIAS PEREIRA, LUCIANO FABRICIO; CORREA, BRUNO SANTOS; SAXENA, RAJENDRA NARAIN. Local Crystalline Structure of Doped Semiconductor Oxides Characterized by Perturbed Angular Correlations: Experimental and Theoretical Insights. CRYSTALS, v. 12, n. 9, p. 15-pg., 2022-09-01. (18/18657-0, 19/15620-0, 17/50332-0)