Stress distribution around dental implants with different inclination of the internal wall: photoelastic analysis

• Grant number: 23/07824-0
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: August 01, 2023
• End date: July 31, 2024
• Field of knowledge: Health Sciences - Dentistry - Dental Materials
• Principal Investigator: Victor Eduardo de Souza Batista
• Grantee: Taynara Beatriz Corte
• Host Institution: Pró-Reitoria de Pesquisa e Pós-Graduação. Universidade do Oeste Paulista (UNOESTE). Presidente Prudente , SP, Brazil

Abstract

The aim of this study will be to evaluate the stress distribution around dental implant with different inclination of the internal wall using the photoelastic analysis. This study will be designed to analyze the stress distribution in implants supporting single prostheses under axial and oblique loading. The variables to be analyzed will be: 1) Implant connection: external and internal connections; 2) inclination of the inner walls between implants with internal connection: Morse cone (CM) and Gran Morse (GM); loading: axial and oblique. Photoelastic models will be performed (n:1 for each group), divided into 3 groups, containing implants that represent the following groups: HE, external hexagon; CM, Morse taper; GM, Gran Morse taper; and screw-retained single crown prostheses. The implant-supported prostheses placed in the photoelastic models will be subjected to a load of 100N in axial and oblique directions. The data will be qualitatively analyzed with the aim of evaluating possible differences in stress distribution. In the qualitative analysis, the fringe order (N) and the direction of stress propagation will be observed, where a higher N (fringe order) indicates a higher magnitude of stress, and the closer the fringes are to each other, the higher the stress concentration. By conducting this study, it will be expected to understand the effect of the inclination of the internal wall of the implant on the stress distribution around the implant.