Study of electronic levels of charge carrier layers for use in perovskite solar cells

• Grant number: 23/09924-2
• Support Opportunities: Scholarships in Brazil - Master
• Start date: November 01, 2023
• End date: June 30, 2025
• Field of knowledge: Physical Sciences and Mathematics - Physics - Condensed Matter Physics
• Principal Investigator: Francisco das Chagas Marques
• Grantee: Zeno de Castro Brandão
• Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil
• Company: Universidade Estadual de Campinas (UNICAMP). Instituto de Química (IQ)
• Associated research grant: 17/11986-5 - Generation and storage of New Energy: bringing technological development for the country, AP.PCPE

Abstract

The production of perovskite solar cells in large areas is a challenge in the current technology developed with perovskite solar cells. However, all the great advances in the development carried out in this type of cells were obtained using the spin coating technique. As this technique does not allow the manufacture of cells in large areas, it is necessary to develop cells with techniques compatible with the production in large areas. In this project, n-type and p-type charge carrier materials will be developed for use in perovskite solar cells using the ALD (Atomic Layer Deposition) technique, which is a technique that allows the fabrication of materials in large areas, including roll-to-roll processes. Layers of tin dioxide (SnO2) and molybdenum oxide (Mo2O3), which are n-type and p-type materials, respectively, will be developed by the ALD technique and their electronic levels related to the valence band, while the conduction band and Fermi level will be investigated using XPS, UPS, STM and UV-Vis techniques. At the end, the developed materials will be tested in a p-i-n structure of perovskite solar cells..