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Single crystal growth of the quasi-one-dimensional Bi4I4 and of the giant Rashba semiconductor BiTeI

Grant number: 23/11836-4
Support Opportunities:Scholarships abroad - Research Internship - Master's degree
Start date: December 01, 2023
End date: May 31, 2024
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Valentina Martelli
Grantee:Cristhian David Hinostroza Vargas Machuca
Supervisor: Geetha Balakrishnan
Host Institution: Instituto de Física (IF). Universidade de São Paulo (USP). São Paulo , SP, Brazil
Institution abroad: University of Warwick, England  
Associated to the scholarship:22/00992-2 - Investigation of the transport properties of the quasi-one-dimensional Bi4I4, BP.MS

Abstract

This internship research fellowship will support the MS candidate to join the group of Prof. Geetha Balakrishnan (University of Warwick, UK) for a period of six months with the aim of growing high-quality single crystals of two selected Bismuth-based compounds by Chemical Vapour Transport (CVT): Bi4I4 (in both alpha and beta phases) and the BiTeI. (AU)

News published in Agência FAPESP Newsletter about the scholarship:
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