Cryogenic temperature control applied to radiation damage measurements in electronic devices.

• Grant number: 24/18028-3
• Support Opportunities: Scholarships in Brazil - Scientific Initiation
• Start date: February 01, 2025
• End date: January 31, 2026
• Field of knowledge: Engineering - Electrical Engineering - Electrical, Magnetic and Electronic Measurements, Instrumentation
• Principal Investigator: Dennis Lozano Toufen
• Grantee: José Wallison de Farias Santos
• Host Institution: Instituto Federal de Educação, Ciência e Tecnologia de São Paulo (IFSP). Campus Guarulhos. Guarulhos , SP, Brazil

Abstract

The ionizing radiation absorbed by semiconductor devices can change their properties by modifying the electrical parameters that characterize them and, in the case of memories or processors, it can modify the information contained in these devices. These effects are especially important in environments where exposure to radiation is quite intense, such as, for example, in the case of satellites, particle accelerators, nuclear reactors, medical equipment, among others. This project aims to use a neural network model to reproduce the behavior of MOSFETs when subjected to changes by ionizing radiation damage. For this, the student must carry out bibliographic research on the already known changes in these semiconductor devices. From the expected changes, implement and test a neural network model, as well as the training algorithm to reproduce such changes. Such a neural model can then be used to simulate the behavior of circuits and systems when the MOSFET is altered by ionizing radiation. The project, therefore, has adherence to the following sectors of strategic technologies: Artificial Intelligence, Nuclear and Space Technologies.