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Synthesis, structural and magnetic characterization of nanometric semiconductors systems: oxides and epitaxial structures.

Grant number: 08/05717-2
Support Opportunities:Scholarships in Brazil - Post-Doctoral
Start date: November 01, 2008
End date: March 31, 2009
Field of knowledge:Physical Sciences and Mathematics - Physics - Condensed Matter Physics
Principal Investigator:Lisandro Pavie Cardoso
Grantee:Juliana Marcela Abraão de Almeida
Host Institution: Instituto de Física Gleb Wataghin (IFGW). Universidade Estadual de Campinas (UNICAMP). Campinas , SP, Brazil

Abstract

This project consists of two subprojects: i) the study of the synthesis process in nanometric systems of semiconductor oxides CeO2 pure and doped with transition metals and of their structural and magnetic properties, whose motivation, beyond the academic interest, is in the possible spintronic applications; ii) the structural study of GaxIn1-xP nanolayer semiconductors, with variable thickness, grown on GaAs (001) substrates by Chemical Beam Epitaxy (CBE), analyzed by X-ray Multiple Diffraction (DMRX), whose motivation is to obtain structural information not available from others techniques. Examples of these information are: analysis of crystalline perfection in the surface or interface through the Bragg-surface (BSD) peaks; structure characterization through the detection of hybrid peaks that correspond to the simultaneous contribution of different lattices shown in only one DMRX measurement; analysis of the strain distribution in the structure through the mapping of the exact diffract condition of BSD peaks complemented by the reciprocal space mapping of the epitaxial structures.

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