Abstract
The behavior of the direct current electrical conductivity and the electrical transport mechanisms in amorphous and nanocrystalline Ga(1-x)M(x)As and Ga(1-x)M(x)N films will be investigated. In these materials M represents Mn or Gd and x represents variable composition in the 0-0.1 range. The films will be prepared using the RF magnetron sputtering technique. Monocrystals with similar com…