Abstract
Because of the strong interaction of terahertz radiation with free charges, the terahertz spectral region, located between 0.1 and 10 THz (0.41 to 41 meV), is extremely suitable for characterizing transport properties in bulk or nanoscale semiconductors. Because of its low energy per photon (0.41 to 41 meV) has also been widely used to characterize low energy excitations in complex materi…