CV Lattes
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Centro Universitário FEI (UNIFEI). Campus de São Bernardo do Campo (Institutional affiliation from the last research proposal) Birthplace: Brazil
bachelor's at Engenharia Elétrica from Centro Universitário da FEI (2003), master's at Electric Engineering from Centro Universitário da FEI (2007) and doctorate at Electric Engineering from Universidade de São Paulo (2010). Has experience in Electric Engineering, focusing on Materials and Components Semiconductors (Source: Lattes Curriculum)
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(Only some records are available in English at this moment)
In order to achieve the growing demand for speed and processing power, new technologies have become the subject of study for the manufacture of devices with extremely small dimensions (sub-20 nm), either with the use of new materials such as graphene transistors, or through different conduction modes, such as tunnel effect transistors. However, for application in memories, a new device ca…
Over the past decades, MOS transistors have been the most applied electronic components in integrated circuits, so that the development of the microelectronics industry is conditioned to their evolution. By reducing the dimensions of MOS transistors, it is possible to increase the number of devices per chip, increasing the processing capacity. However, the scaling of the transistors dimen…
The double gate MOS transistors are presented as an interesting alternative to solve the problems derived from the continuous reduction of the dimensions of MOS transistors, due to the excellent improvement in the performance of MOS devices with extremely submicrometer dimensions, with channel lengths smaller than 100 nm. Recently, from the concepts of double gate transistors, structures …
| 8 / 8 | Completed research grants |
| 1 / 1 | Ongoing scholarships in Brazil |
| 3 / 3 | Completed scholarships in Brazil |
| 12 / 12 | All research grants and scholarships |
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